当前位置： 首页 >
Everspin Technologies, Inc. 总部位于美国亚利桑那州的钱德勒，是设计、制造和销售离散、嵌入式磁阻 RAM (MRAM) 和转动扭矩 MRAM (ST-MRAM) 的全球领导者，其产品针对那些数据的持久性和完整性、低延迟和安全性至关重要的行业和应用。凭借在数据中心、云存储、能源、工业、汽车和运输市场中部署了超过 7,000 万个 MRAM 和 ST-MRAM 产品，Everspin 奠定了最强大、增长最快的 MRAM 用户基础。
Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world.
Core Competence with MRAM: From Perpendicular to Field-Switched
Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells.
In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.
