SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
700 V @ TJ = 150 °C
Ultra Low Gate Charge (Typ. Qg = 39 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF)
Internal Gate Resistance: 4.6 Ω
Optimized Capacitance
Typ. RDS(on) = 140 mΩ
Benefits:
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Lower peak Vds and lower Vgs oscillation
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Consumer
Industrial
End Products:
Notebook / Desktop computer
Game Console
Telecom / Server
LCD / LED TV
LED Lighting / Ballast
Adapter
属性 | 数值 |
---|---|
通道类型 | N |
最大连续漏极电流 | 19 A |
最大漏源电压 | 650 V |
封装类型 | TO-220 |
安装类型 | 通孔 |
引脚数目 | 3 |
最大漏源电阻值 | 165 mΩ |
通道模式 | 增强 |
最大栅阈值电压 | 4.5V |
最小栅阈值电压 | 2.5V |
最大功率耗散 | 154 W |
晶体管配置 | 单 |
最大栅源电压 | ±30 V |
长度 | 10.67mm |
每片芯片元件数目 | 1 |
典型栅极电荷@Vgs | 10 V 时,39 常闭 |
宽度 | 4.7mm |
最高工作温度 | +150 °C |