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Vishay SIHP10N40D-E3 IGBT

订 货 号:SIHP10N40D-E3      品牌:威世_Vishay

库存数量:10             品牌属性:

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Vishay SIHP10N40D-E3 IGBT
产品详细信息

Vishay MOSFET

The Vishay through-hole mount N-channel TO-220AB-3 MOSFET is a new age product with a drain-source voltage of 400V and a maximum gate-source voltage of 30V. It has a drain-source resistance of 600mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 147W and continuous drain current of 10A. It has a driving voltage of 10V. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Fast switching
• High body diode for durability
• Lead (Pb) free component
• Low area specific on-resistance
• Low figure-of-merit (FOM): Ron x Qg
• Low input capacitance (Ciss)
• Operating temperature ranges between -55°C and 150°C
• Reduced capacitive switching losses
• Simple gate drive circuitry

Applications

• Battery chargers
• Displays (LCD or plasma TVs)
• Motor drives
• SMPS power supplies
• Welding - Induction heating

Certifications

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• UIS tested


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