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Vishay SUD09P10-195-GE3 IGBT

订 货 号:SUD09P10-195-GE3      品牌:威世_Vishay

库存数量:10             品牌属性:

品牌商价:¥0.00

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Vishay SUD09P10-195-GE3 IGBT
产品详细信息

Vishay MOSFET

The Vishay MOSFET is a P-channel, TO-252-3 package is a new age product with a drain-source voltage of 100V and maximum gate-source voltage of 20V. It has a drain-source resistance of 195mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 32.1W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications

• DC/DC converters
• Power switches


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